IDiyas

For the Inventor, By the Inventor

Chiryu, Japan

Kensaku Yamamoto

USPTO Granted Patents = 12

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 25(Granted Patents)


Location History:

  • Chiryu, JP (2009 - 2013)
  • Toyokawa, JP (2013)
  • Okazaki, JP (2017)
  • Kariya, JP (2019 - 2022)

Company Filing History:

goldMedal10 out of 19,697 
 
Denso Corporation
 patents
silverMedal4 out of 36,499 
 
Toyota Jidosha Kabushiki Kaisha
 patents
where one patent can have more than one assignee

Years Active: 2009-2022

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12 patents (USPTO):Explore Patents
1. 11501971 - Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device (2022-11-15),
2. 10546933 - Switching element and method of manufacturing the same (2020-01-28),
3. 10468520 - Switching element and method of manufacturing the same (2019-11-05),
4. 9640655 - Semiconductor device and manufacturing method of semiconductor device (2017-05-02),
5. 8518809 - Manufacturing method of silicon carbide single crystal (2013-08-27),
6. 8492867 - Semiconductor device including cell region and peripheral region having high breakdown voltage structure (2013-07-23),
7. 8470091 - SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device (2013-06-25),
8. 8154074 - Silicon carbide semiconductor device and manufacturing method of the same (2012-04-10),
9. 7994513 - Silicon carbide semiconductor device including deep layer (2011-08-09),
10. 7993966 - Method for manufacturing silicon carbide semiconductor device having high channel mobility (2011-08-09),
11. 7667269 - Trench gate type semiconductor device (2010-02-23),
12. 7498658 - Trench gate type insulated gate bipolar transistor (2009-03-03),
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