The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Jan. 29, 2019
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/049 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 29/1608 (2013.01); H01L 29/42364 (2013.01); H01L 29/513 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01);
Abstract
A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.