The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Aug. 29, 2006
Takeshi Endo, Obu, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Jun Kawai, Anjo, JP;
Kensaku Yamamoto, Chiryu, JP;
Eiichi Okuno, Mizuho, JP;
Takeshi Endo, Obu, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Jun Kawai, Anjo, JP;
Kensaku Yamamoto, Chiryu, JP;
Eiichi Okuno, Mizuho, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×10cm.