The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Apr. 06, 2006
Yukio Tsuzuki, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Yoshihiko Ozeki, Nukata-gun, JP;
Kensaku Yamamoto, Chiryu, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Yoshihiko Ozeki, Nukata-gun, JP;
Kensaku Yamamoto, Chiryu, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.