For the Inventor, By the Inventor

Enter inventor name

Norihito Tokura

USPTO Granted Patents = 70 (Patent Applications = 3)

EPO Patents = 3 (Patent Applications = 1)

Average Co-Inventor Count = 3.5

ph-index = 23

Forward Citations = 1,646(Granted Patents)

Forward Citations (Not Self Cited) = 1,628(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Nukata, JP (1986 - 1988)
Aichi, JP (1984 - 1990)
Okazaki, JP (1982 - 2016)

Company Filing History:

32 out of 19,748

Denso Corporation

22 out of 3,252

Nippondenso Co., Ltd.

16 out of 1,600

Nippon Soken, Inc.

4. 4 out of 36,713

Toyota Jidosha Kabushiki Kaisha

5. 1 out of 1,139

Kabushiki Kaisha Toyota Chuo Kenkyusho

Ipics Corporation

where one patent can have more than one assignee

Years Active: 1982-2016

Loading Chart...

Loading Chart...

Areas of Expertise:

Silicon Carbide Semiconductor

Lateral Semiconductor Device

Insulated Gate Bipolar Transistor

DC-DC Converter

Vertical Type MOSFET

Current Sensor

Semiconductor Chip Package

Power Converter

Field Effect Transistor

Inverter Circuit

Trench Gate Type Device

Boron-Doped Semiconductor

70 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9263267 - Silicon carbide semiconductor device and method of manufacturing the same (2016-02-16),

2. 9240445 - Lateral semiconductor device (2016-01-19),

3. 9214536 - Lateral insulated gate bipolar transistor (2015-12-15),

4. 8941122 - Silicon carbide semiconductor device and method of manufacturing the same (2015-01-27),

5. 8854033 - Current sensor, inverter circuit, and semiconductor device having the same (2014-10-07),

6. 8742534 - Semiconductor device having lateral diode (2014-06-03),

7. 8604513 - Semiconductor device having SOI substrate (2013-12-10),

8. 8476673 - Diode (2013-07-02),

9. 8354691 - Lateral insulated-gate bipolar transistor (2013-01-15),

10. 8179106 - DC-DC converter (2012-05-15),

11. 8102025 - Semiconductor device having IGBT and diode (2012-01-24),

12. 8076718 - Insulated gate semiconductor device and method for producing the same (2011-12-13),

13. 7692214 - Semiconductor device having IGBT cell and diode cell and method for designing the same (2010-04-06),

14. 7667269 - Trench gate type semiconductor device (2010-02-23),

15. 7616859 - Semiconductor device (2009-11-10),

Title: Norihito Tokura: Pioneering Inventor from Okazaki

Introduction: Norihito Tokura is a distinguished inventor hailing from Okazaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tokura holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Tokura has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Tokura has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Norihito Tokura's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a respected figure in the world of inventors and innovators.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…