The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Sep. 07, 2011
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Akio Nakagawa, Chigasaki, JP;
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Akio Nakagawa, Chigasaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.