The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Mar. 20, 2007
Norihito Tokura, Okazaki, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Kenji Kouno, Gifu, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity ρand a thickness Lof the first layer, a resistivity ρand a thickness Lof the fourth layer, and a half of a minimum width Wof the second layer on a substrate plane have a relationship of (ρ/ρ)×(L·L/W)<1.6.