The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jun. 01, 2011
Satoshi Shiraki, Toyohashi, JP;
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Masahiro Yamamoto, Kasugai, JP;
Akira Yamada, Nukata-gun, JP;
Hiroyasu Kudo, Ichinomiya, JP;
Youichi Ashida, Nukata-gun, JP;
Akio Nakagawa, Chigasaki, JP;
Satoshi Shiraki, Toyohashi, JP;
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Masahiro Yamamoto, Kasugai, JP;
Akira Yamada, Nukata-gun, JP;
Hiroyasu Kudo, Ichinomiya, JP;
Youichi Ashida, Nukata-gun, JP;
Akio Nakagawa, Chigasaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.