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For the Inventor, By the Inventor

Toyohashi, Japan

Satoshi Shiraki

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Denso Corporation. Active years: 2001-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Shiraki. Retrieved from https://idiyas.com/inventor/satoshi-shiraki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22

% Patents Active = 36.4

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 140(Granted Patents)


Location History:

  • Toyoashi, JP (2001)
  • Nukata-gun, JP (2001)
  • Toyohashi, JP (2002 - 2016)

Company Filing History:

goldMedal22 out of 20,436 
 
Denso Corporation
 patents

Years Active: 2001-2016

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Areas of Expertise:
Lateral Semiconductor Device
Insulated Gate Bipolar Transistor
Current Sensor
Inverter Circuit
SOI Substrate
Diode
Load Driving Device
Level Shift Circuit
Power MOS Transistor
Thin Film Resistor
Bipolar Transistors
Lateral MOSFET
22 patents (USPTO):Explore Patents
1. 9240445 - Lateral semiconductor device (2016-01-19),
2. 9214536 - Lateral insulated gate bipolar transistor (2015-12-15),
3. 9136362 - Semiconductor device having lateral element (2015-09-15),
4. 8854033 - Current sensor, inverter circuit, and semiconductor device having the same (2014-10-07),
5. 8604513 - Semiconductor device having SOI substrate (2013-12-10),
6. 8476673 - Diode (2013-07-02),
7. 8148809 - Semiconductor device, method for manufacturing the same, and multilayer substrate having the same (2012-04-03),
8. 8102047 - Load driving device (2012-01-24),
9. 7829971 - Semiconductor apparatus (2010-11-09),
10. 7821069 - Semiconductor device and method for manufacturing the same (2010-10-26),
11. 7799667 - Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode (2010-09-21),
12. 7755187 - Load driving device (2010-07-13),
13. 7639060 - Level shift circuit (2009-12-29),
14. 7223668 - Method of etching metallic thin film on thin film resistor (2007-05-29),
15. 7109558 - Power MOS transistor having capability for setting substrate potential independently of source potential (2006-09-19),

Title: **Innovations and Contributions of Satoshi Shiraki in Semiconductor Technologies**

Introduction

Satoshi Shiraki, a distinguished inventor based in Toyohashi, Japan, has made significant advancements in the field of semiconductor technology. Holding an impressive total of 22 patents, his contributions have been instrumental in enhancing the performance and efficiency of electronic devices.

Latest Patents

Among his latest innovations are two noteworthy patents. The first is for a **Lateral Semiconductor Device**, which features a semiconductor layer, an insulating layer, and a resistive field plate. This invention effectively integrates a first and a second semiconductor region, creating a unique circuit arrangement that optimizes performance. The resistive field plate, which is strategically positioned between the semiconductor regions, underscores the innovation's potential for future applications.

The second patent, the **Lateral Insulated Gate Bipolar Transistor**, presents a complex arrangement involving a semiconductor substrate that includes various layers such as a drift layer, a collector region, and a barrier layer. This invention addresses crucial aspects of impurity concentration and channel layer positioning, paving the way for advancements in transistor technology.

Career Highlights

Satoshi Shiraki is currently affiliated with Denso Corporation, where his work focuses on innovative semiconductor solutions. His expertise in this domain has allowed him to contribute significantly to the company's projects and research initiatives, solidifying his reputation as a leading figure in the semiconductor industry.

Collaborations

During his career, Shiraki has collaborated with esteemed colleagues, including Shigeki Takahashi and Akira Yamada. Their teamwork has fostered a creative environment that encourages the development of groundbreaking technologies and enhances the overall impact of their inventions within the industry.

Conclusion

Satoshi Shiraki's contributions to semiconductor technology exemplify how innovative thinking can lead to significant advancements in electronics. With a strong foundation of patents and collaborative efforts with skilled professionals, Shiraki continues to pave the way for the future of semiconductor devices. His work not only advances the technological landscape but also positions him as a key player in the ongoing evolution of this vital industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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