The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
May. 10, 2012
Takashi Suzuki, Toyota, JP;
Norihito Tokura, Okazaki, JP;
Satoshi Shiraki, Toyohashi, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Akira Yamada, Nukata-gun, JP;
Takashi Suzuki, Toyota, JP;
Norihito Tokura, Okazaki, JP;
Satoshi Shiraki, Toyohashi, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Akira Yamada, Nukata-gun, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.