The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 14, 2012
Takeshi Sakai, Nagoya, JP;
Akira Yamada, Nukata-gun, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Satoshi Shiraki, Toyohashi, JP;
Takeshi Sakai, Nagoya, JP;
Akira Yamada, Nukata-gun, JP;
Shigeki Takahashi, Okazaki, JP;
Youichi Ashida, Nukata-gun, JP;
Satoshi Shiraki, Toyohashi, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×10cm.