The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Sep. 23, 2010
Youichi Ashida, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Yoshiaki Nakayama, Okazaki, JP;
Satoshi Shiraki, Toyohashi, JP;
Kouji Senda, Nishikamo-gun, JP;
Youichi Ashida, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Shigeki Takahashi, Okazaki, JP;
Yoshiaki Nakayama, Okazaki, JP;
Satoshi Shiraki, Toyohashi, JP;
Kouji Senda, Nishikamo-gun, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.