The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 29, 2009
Kouji Senda, Nishikamo-gun, JP;
Satoshi Shiraki, Toyohashi, JP;
Yukihiro Maeda, Kasugai, JP;
Shinichi Hirose, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Takashi Nakano, Nukata-gun, JP;
Kouji Senda, Nishikamo-gun, JP;
Satoshi Shiraki, Toyohashi, JP;
Yukihiro Maeda, Kasugai, JP;
Shinichi Hirose, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Takashi Nakano, Nukata-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit.