The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Aug. 03, 2011
Takao Yamamoto, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Hisato Kato, Nagoya, JP;
Akio Nakagawa, Chigasaki, JP;
Takao Yamamoto, Nukata-gun, JP;
Norihito Tokura, Okazaki, JP;
Hisato Kato, Nagoya, JP;
Akio Nakagawa, Chigasaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.