Denso Corporation

Nippondenso Co., Ltd.

Nippon Soken, Inc.

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Ipics Corporation

Norihito Tokura

Hisasi Kawai

Shigeki Takahashi

Takeshi Miyajima

Tsuyoshi Yamamoto

Naoto Okabe

Akira Kuroyanagi

Yukio Tsuzuki

Satoshi Shiraki

Yoshihiko Ozeki

Hiroo Fuma

Youichi Ashida

Takashi Suzuki

Akio Nakagawa

Atsushi Umeda

Tokio Kohama

Kenji Kanehara

Kunihiko Hara

Mitsuhiro Kataoka

Kazukuni Hara

Hirohide Sato

Hidefumi Takaya

Seiji Morino

Yasushi Okura

Hisato Kato

Mitiyasu Moritugu

Shin Kusase

Yuichi Takeuchi

Kazuhiko Sugiura

Toshio Murata

Masahiro Goto

Tsutomu Uesugi

Tomonori Kimura

Makio Iida

Akira Yamada

Masahito Mizukoshi

Naohito Kato

Yuuichi Takeuchi

Jun Kawai

Fumio Ohara

Kimimori Hamada

Toshiaki Nishizawa

Hiroyasu Ito

Makoto Taniguchi

Tsuneyuki Egami

Yasuyuki Sakakibara

Kenji Kouno

Masahiro Yamamoto

Masakiyo Horie

Yoshifumi Okabe

Takanori Teshima

Naohiko Hirano

Shoichi Onda

Yutaka Tomatsu

Haruo Kawakita

Kensaku Yamamoto

Yoshiaki Nakayama

Kenzo Mitani

Hiroyuki Kano

Shinji Amano

Takao Yamamoto

Takamasa Suzuki

Shinya Sakurai

Kyosuke Miyagi

Hiroyasu Kudo

Masatoshi Togawa

Hirohiko Saito

Hironari Kuno

Junji Kawai

Kouji Senda

Hiroki Sone

Yuuchi Takeuchi

Kazutaka Hasegawa

Takayoshi Ito

Masato Soumiya

Norikazu Kanatake

Atsuo Fukumoto

Hidemitsu Hayashi

In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.

Silicon carbide semiconductor device and method of manufacturing the same

A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

Lateral semiconductor device

A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.

Lateral insulated gate bipolar transistor

A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

Current sensor, inverter circuit, and semiconductor device having the same

A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.

Semiconductor device having lateral diode

A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

Semiconductor device having SOI substrate

A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.

Diode

A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.

Lateral insulated-gate bipolar transistor

A synchronous-rectifier type DC-DC converter includes a high-side main switch element, a low-side rectifying switch element, and a control drive circuit. The rectifying switch element includes a rectifying transistor element and a rectifying diode element connected in antiparallel with the rectifying transistor element. The control drive circuit detects an input voltage to the main switch element and determines the input voltage or a rate of increase in the input voltage. When the determined value exceeds a predetermined reference value, a complementary ON/OFF operation of the main switch element and the rectifying transistor element is released, and a state where both the main switch element and the rectifying transistor element are kept OFF for a time period that is longer than a dead-time during the complementary ON/OFF operation is set.

DC-DC converter

A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.

Semiconductor device having IGBT and diode

The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.

Insulated gate semiconductor device and method for producing the same

A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity &#x3c1;and a thickness Lof the first layer, a resistivity &#x3c1;and a thickness Lof the fourth layer, and a half of a minimum width Wof the second layer on a substrate plane have a relationship of (&#x3c1;/&#x3c1;)&#xd7;(L&#xb7;L/W)&#x3c;1.6.

Semiconductor device having IGBT cell and diode cell and method for designing the same

A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 &#x3bc;m.

Trench gate type semiconductor device

A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.

Semiconductor device

Growing community of inventors

Okazaki, Japan

Norihito Tokura