The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jun. 12, 2008
Norihito Tokura, Okazaki, JP;
Hiroki Sone, Nukata-gun, JP;
Shinji Amano, Okazaki, JP;
Hisato Kato, Okazaki, JP;
Norihito Tokura, Okazaki, JP;
Hiroki Sone, Nukata-gun, JP;
Shinji Amano, Okazaki, JP;
Hisato Kato, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.