The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jan. 21, 2010
Yasuo Kitou, Okazaki, JP;
Hiroki Watanabe, Obu, JP;
Masanori Nagaya, Kariya, JP;
Kensaku Yamamoto, Chiryu, JP;
Eiichi Okuno, Mizuho, JP;
Yasuo Kitou, Okazaki, JP;
Hiroki Watanabe, Obu, JP;
Masanori Nagaya, Kariya, JP;
Kensaku Yamamoto, Chiryu, JP;
Eiichi Okuno, Mizuho, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.