The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Sep. 12, 2011
Toshimasa Yamamoto, Ichinomiya, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.