The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Apr. 19, 2012
Hiroki Watanabe, Tokai, JP;
Shinichiro Miyahara, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Hiroki Watanabe, Tokai, JP;
Shinichiro Miyahara, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.