The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Dec. 20, 2011
Tomohiro Mimura, Nisshin, JP;
Shinichiro Miyahara, Nisshin, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Tomohiro Mimura, Nisshin, JP;
Shinichiro Miyahara, Nisshin, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.