The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Sep. 04, 2012
Shinichiro Miyahara, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Yukihiko Watanabe, Aichi-gun, JP;
Narumasa Soejima, Aichi-gun, JP;
Tsuyoshi Ishikawa, Aichi-gun, JP;
Shinichiro Miyahara, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Yukihiko Watanabe, Aichi-gun, JP;
Narumasa Soejima, Aichi-gun, JP;
Tsuyoshi Ishikawa, Aichi-gun, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.