The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jul. 20, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a first semiconductor element and a second semiconductor element in a semiconductor wafer. The first semiconductor element includes a first electrode formed on a front surface of the semiconductor wafer. The second semiconductor element is adjacent to the first semiconductor element and includes a second electrode formed on the front surface. The method further includes forming a first insulating layer on the front surface located at a first boundary portion between the first electrode and the second electrode; applying a specific potential different from a potential of the second electrode on the first electrode after the formation of the first insulating layer; and cutting the semiconductor wafer at the first boundary portion so as to divide the first semiconductor element from the second semiconductor element.