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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793376 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Aug. 06, 2013

Silicon carbide semiconductor device and method of manufacturing the same

Applicants:

Denso Corporation, Kariya, Aichi-pref., JP;

Jun Morimoto, Toyota-shi, Aichi-ken, JP;

Inventors:

Shinichiro Miyahara, Nagoya, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Jun Morimoto, Nisshin, JP;

Narumasa Soejima, Seto, JP;

Yukihiko Watanabe, Nagoya, JP;

Assignees:

DENSO CORPORATION, Kariya, JP;

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Ori Nadav

Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 21/04 (2006.01); H01L 21/28 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66734 (2013.01); H01L 21/049 (2013.01); H01L 21/28158 (2013.01); H01L 21/30604 (2013.01); H01L 29/045 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01);
Abstract

In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.

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