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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784335 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Jun. 29, 2017

Silicon carbide semiconductor device and manufacturing method therefor

Applicants:

Denso Corporation, Kariya, Aichi-pref., JP;

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Yuichi Takeuchi, Kariya, JP;

Shinichiro Miyahara, Kariya, JP;

Atsuya Akiba, Kariya, JP;

Katsumi Suzuki, Toyota, JP;

Yukihiko Watanabe, Nagakute, JP;

Assignees:

DENSO CORPORATION, Kariya, JP;

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Steven B Gauthier

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 29/12 (2006.01); H01L 21/04 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/06 (2013.01); H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H01L 21/046 (2013.01); H01L 29/7397 (2013.01);
Abstract

A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.

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