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Hsinchu, Taiwan

United Silicon Incorporated

USPTO Granted Patents = 54

Forward Citations = 380

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43 inventors (with patents filed for the assignee):

Kuan-Yang Liao (19 out of 33 patents)

Tong-Hsin Lee (9 out of 19 patents)

Shih-Ming Lan (6 out of 6 patents)

4. Hsin-Pang Lu (4 out of 18 patents)

5. Hsien-Liang Meng (3 out of 16 patents)

6. Shih-Huang Huang (3 out of 22 patents)

7. Tang Yu (3 out of 6 patents)

8. Eddie Chen (3 out of 6 patents)

9. Chun-Liang Liu (2 out of 6 patents)

10. Jen-Tsung Lin (2 out of 5 patents)

11. Li-Wu Tsao (2 out of 5 patents)

12. Cheng-Chieh Huang (2 out of 6 patents)

13. Tse-Wei Liu (2 out of 5 patents)

14. Chin-Hung Tseng (2 out of 3 patents)

15. Tsung-Hsien Han (2 out of 2 patents)

Core Competencies:

Photoresist

MOS Device

Vibration Damper

Chemical Vapor Deposition

Field Effect Transistor

Silicon-On-Insulator

Dynamic RAM

Capacitor Fabrication

Dielectric Layer

Voltage Regulator

Memory Cell

Etching Method

54 patents: Sort by Forward Citations

1. 6294314 - Method of fabricating an opening with deep ultra-violet photoresist (2001-09-25),

2. 6225642 - Buried channel vertical double diffusion MOS device (2001-05-01),

3. 6213444 - Vibration damper (2001-04-10),

4. 6204147 - Method of manufacturing shallow trench isolation (2001-03-20),

5. 6187692 - Method for forming an insulating film (2001-02-13),

6. 6180537 - Method of fabricating dielectric layer in alignment marker area (2001-01-30),

7. 6180507 - Method of forming interconnections (2001-01-30),

8. 6180493 - Method for forming shallow trench isolation region (2001-01-30),

9. 6180477 - Method of fabricating field effect transistor with silicide sidewall spacers (2001-01-30),

10. 6179919 - Apparatus for performing chemical vapor deposition (2001-01-30),

11. 6175135 - Trench contact structure of silicon on insulator (2001-01-16),

12. 6165279 - Method for cleaning a semiconductor wafer (2000-12-26),

13. 6162731 - Method of defining a conductive layer (2000-12-19),

14. 6159845 - Method for manufacturing dielectric layer (2000-12-12),

15. 6156608 - Method of manufacturing cylindrical shaped capacitor (2000-12-05),

Company Overview

United Silicon Incorporated, based in Hsinchu, Taiwan, specializes in semiconductor manufacturing, focusing on advanced technologies essential for modern electronics. The company is engaged in the development and production of critical components such as photoresists, MOS devices, and silicon-on-insulator technologies. Their expertise extends to chemical vapor deposition and the fabrication of dynamic RAM and capacitors, positioning them as a key player in the semiconductor industry, catering to a diverse range of applications in electronics.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

54 Patents

#91 in Hsinchu

#377 in Taiwan

#13,140 in the World

Hsinchu, Taiwan

United Silicon Incorporated

Forward Citations = 380

43 inventors:

Kuan-Yang Liao (19 out of 33 patents)

Tong-Hsin Lee (9 out of 19 patents)

Shih-Ming Lan (6 out of 6 patents)

4. Hsin-Pang Lu (4 out of 18 patents)

5. Hsien-Liang Meng (3 out of 16 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: United Silicon Incorporated. Retrieved from https://idiyas.com/company/united-silicon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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