The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Feb. 01, 1999
Chih-Hsun Chu, Hsinchu, TW;
United Silicon Incorporated, Hsinchu, TW;
Abstract
A method for forming shallow trench isolation region. The method includes the steps of forming spacers on the sidewalls of a patterned mask layer and a pad oxide layer, and then etching the substrate to form a trench using the mask layer and the spacers as a mask. Thereafter, a buffer layer conformal to the surface profile of the device is formed over the substrate, and then an insulation layer is formed inside the trench. The spacers can prevent the etching of the insulation layer to form recess cavities at the upper corners of the trench when the pad oxide layer is removed in an etching operation. Hence, the kink effect is prevented. The buffer layer can prevent the oxidation of trench sidewalls when the insulation layer is densified in an oxygen-filled atmosphere. Moreover, the buffer layer can also prevent sideways etching of the insulation layer when the pad oxide layer is etched.