The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
May. 11, 1998
Applicant:
Inventor:
Kuan-Yang Liao, Taipei, TW;
Assignee:
United Silicon Incorporated, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ;
U.S. Cl.
CPC ...
C23C 1/600 ;
Abstract
An apparatus and a method for performing chemical vapor deposition. The apparatus includes a plasma generator for dissociating source gases into atomic or ionic states, and a laminar flow reaction chamber connected to the plasma generator for depositing the dissociated atoms or ions. The apparatus and method utilizes the capacity of plasma to deposit thin films at a lower temperature combined with the capacity of a laminar flow chemical vapor deposition method to deposit a conformable layer.