Kuan-Yang Liao

This inventor holds 33 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: United Silicon Incorporated, United Microelectronics Corp.. Active years: 1999-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuan-Yang Liao. Retrieved from https://idiyas.com/inventor/kuan-yang-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 7

Forward Citations = 198(Granted Patents)

Location History:

Taipei City, TW (2000)
Taipei, TW (1999 - 2008)
Hsinchu, TW (2007 - 2009)

Company Filing History:

19 out of 54

United Silicon Incorporated

patents

16 out of 7,269

United Microelectronics Corp.

patents

where one patent can have more than one assignee

Years Active: 1999-2009

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Areas of Expertise:

Metal Oxide Semiconductor

Semiconductor Devices

Fin Field Effect Transistor

DRAM Capacitor

Chemical Vapor Deposition

Deep Ultra-Violet Photoresist

Dynamic Random Access Memory

Cylindrical Capacitor

Trench Contact Structure

Shallow Trench Isolation

Silicon-on-Insulator

Embedded DRAM

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7595234 - Fabricating method for a metal oxide semiconductor transistor (2009-09-29),

2. 7462542 - Method of fabricating semiconductor devices and method of adjusting lattice distance in device channel (2008-12-09),

3. 7326622 - Method of manufacturing semiconductor MOS transistor device (2008-02-05),

4. 7319063 - Fin field effect transistor and method for manufacturing fin field effect transistor (2008-01-15),

5. 7220647 - Method of cleaning wafer and method of manufacturing gate structure (2007-05-22),

6. 7214988 - Metal oxide semiconductor transistor (2007-05-08),

7. 7196019 - Method of removing spacers and fabricating MOS transistor (2007-03-27),

8. 7135365 - Method of manufacturing MOS transistors (2006-11-14),

9. 6391708 - Method of manufacturing DRAM capacitor (2002-05-21),

10. 6350682 - Method of fabricating dual damascene structure using a hard mask (2002-02-26),

11. 6329243 - Method to form crown capacitor for high density DRAM (2001-12-11),

12. 6294314 - Method of fabricating an opening with deep ultra-violet photoresist (2001-09-25),

13. 6235596 - Method for manufacturing a MOS device with multiple threshold voltages (2001-05-22),

14. 6225642 - Buried channel vertical double diffusion MOS device (2001-05-01),

15. 6214659 - Method to crown capacitor for high density DRAM (2001-04-10),

Title: The Innovative Journey of Inventor Kuan-Yang Liao

Introduction: Kuan-Yang Liao is a pioneering inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kuan-Yang Liao holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Kuan-Yang Liao has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Kuan-Yang Liao has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange.

Conclusion: In conclusion, Kuan-Yang Liao stands as a visionary inventor whose relentless pursuit of innovation has left an indelible mark on the world of technology. His passion for pushing boundaries and solving complex challenges continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]