The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Sep. 20, 2005
Po-chao Tsao, Taipei County, TW;
Chang-chi Huang, Miaoli, TW;
Ming-tsung Chen, Hsinchu County, TW;
Yi-yiing Chiang, Taipei, TW;
Yu-lan Chang, Kaohsiung, TW;
Chung-ju Lee, Hsinchu Hsien, TW;
Chih-ning Wu, Hsinchu, TW;
Kuan-yang Liao, Hsinchu, TW;
Po-Chao Tsao, Taipei County, TW;
Chang-Chi Huang, Miaoli, TW;
Ming-Tsung Chen, Hsinchu County, TW;
Yi-Yiing Chiang, Taipei, TW;
Yu-Lan Chang, Kaohsiung, TW;
Chung-Ju Lee, Hsinchu Hsien, TW;
Chih-Ning Wu, Hsinchu, TW;
Kuan-Yang Liao, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a lightly doped drain (LDD) in the substrate beside the gate structure. Other spacers are formed on respective sidewalls of the offset spacers. Thereafter, a second ion implantation process is performed to form source/drain region in the substrate beside the spacers. Then, a metal silicide layer is formed on the surface of the source and the drain. An oxide layer is formed on the surface of the metal silicide layer. The spacers are removed and an etching stop layer is formed on the substrate. With the oxide layer over the metal silicide layer, the solvent for removing the spacers is prevented from damaging the metal silicide layer.