Hsinchu, Taiwan

Ming-Tsung Chen

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Tsung Chen. Retrieved from https://idiyas.com/inventor/ming-tsung-chen-ph8v98f5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Chu-Pei, TW (2003)
  • Hsin-Chu Hsien, RW (2008)
  • Hsinchu County, TW (2007 - 2012)
  • Hsin-Chu Hsien, TW (2006 - 2016)
  • Tainan, TW (2013 - 2016)

Company Filing History:


Years Active: 2003-2016

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Areas of Expertise:
Semiconductor Device
Epitaxial Structures
Transistor Methods
Thin Film Resistor
Interconnect Structure
Nickel Silicide
Salicide Processes
Contact Holes
Gate Structure
Alignment Mark
Defect Inspection
Fabrication Method
24 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ming-Tsung Chen in Semiconductor Technology

Introduction

Ming-Tsung Chen, an influential inventor residing in Hsin-Chu Hsien, Taiwan, has made significant strides in semiconductor technology. With a remarkable portfolio comprising 24 patents, Chen has established himself as a key figure in the field, contributing to advancements that are shaping the future of electronic devices.

Latest Patents

Chen's most recent patents include innovative developments focused on semiconductor devices and their fabrication methods. One notable patent describes a semiconductor device featuring epitaxial structures and a comprehensive method for fabricating the same. This invention showcases a substrate equipped with multiple isolation structures, a gate structure situated within the active area, and a series of encapsulated dummy gate structures. The design enhances the performance of semiconductor devices by optimizing the spatial relationships between components, as the distance between dummy gate edges and the boundary of the active area is precisely controlled. Additionally, Chen has patented a sophisticated gate structure that incorporates a dual spacer mechanism, which allows for enhanced precision in semiconductor fabrication.

Career Highlights

Chen currently holds a pivotal position at United Microelectronics Corporation, an esteemed organization known for its contributions to the semiconductor industry. His work at the company has led to groundbreaking inventions that support the efficient production of advanced semiconductor devices. Over the years, Chen has exhibited a remarkable ability to merge theoretical knowledge with practical applications, solidifying his reputation as a leader in innovation.

Collaborations

Throughout his career, Chen has collaborated with several esteemed professionals, including Po-Chao Tsao and Chang-Chi Huang. These partnerships have fostered a collaborative environment that has been instrumental in driving forward the boundaries of semiconductor technology. By sharing expertise and insights, these inventors have collectively contributed to the evolution of innovative solutions within their field.

Conclusion

Ming-Tsung Chen's body of work reflects a dedication to innovation and excellence in semiconductor technology. With numerous patents to his name, his contributions continue to be a driving force behind advancements in electronic devices. As he and his collaborators continue to push the limits of what is possible, the impact of Chen's inventions will undoubtedly resonate throughout the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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