The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Oct. 06, 2005
Applicants:
Po-chao Tsao, Taipei Hsien, TW;
Chang-chi Huang, Miao-Li Hsien, TW;
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Inventors:
Po-Chao Tsao, Taipei Hsien, TW;
Chang-Chi Huang, Miao-Li Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer is then patterned to form a plurality of openings exposing the etch stop layer. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the etch stop layer. The dielectric thin film disposed on the dielectric layer and the etch stop layer is then removed.