The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Oct. 28, 2011
Applicants:

Ming-te Wei, Changhua County, TW;

Po-chao Tsao, Tainan, TW;

Ming-tsung Chen, Tainan, TW;

Inventors:

Ming-Te Wei, Changhua County, TW;

Po-Chao Tsao, Tainan, TW;

Ming-Tsung Chen, Tainan, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a fabricating method of a semiconductor element. First, a substrate is provided and a first layout structure having a first width is formed on the substrate. Then, an etching mask is formed to cover the first layout structure, and the etching mask exposes a portion of the first layout structure. After that, the first layout structure is etched with the etching mask to form a second layout structure having a second width. The second width is less than the first width. This fabricating method is capable of finishing the fabrication of gate structures in two different directions. Accordingly, the layout flexibility is improved.


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