The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Sep. 17, 2010
Po-chao Tsao, Taipei Hsien, TW;
Chang-chi Huang, Miao-Li Hsien, TW;
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Feng-yi Chang, Chiayi County, TW;
Pei-yu Chou, Taipei Hsien, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Chih-wen Feng, Tainan County, TW;
Ying-chih Lin, Tainan, TW;
Po-Chao Tsao, Taipei Hsien, TW;
Chang-Chi Huang, Miao-Li Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
Feng-Yi Chang, Chiayi County, TW;
Pei-Yu Chou, Taipei Hsien, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
Chih-Wen Feng, Tainan County, TW;
Ying-Chih Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An opening structure includes a semiconductor substrate, at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall, a dielectric thin film covering at least a portion of the sidewall of each of the openings, and a metal layer filled in the openings.