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Tainan, Taiwan

Jiunn-Hsiung Liao

This inventor holds 72 USPTO granted patents and 18 published patent applications and 1 EPO patent, primarily in Semiconductor Fabrication (CPC class H01L). Top assignee: United Microelectronics Corp.. Active years: 2004-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiunn-Hsiung Liao. Retrieved from https://idiyas.com/inventor/jiunn-hsiung-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 72 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.9

ph-index = 7

Forward Citations = 153(Granted Patents)

Forward Citations (Not Self Cited) = 135(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsin-Chu, TW (2004)
  • Shanhua Township, Tainan County, TW (2009 - 2012)
  • Tainan Hsien, TW (2008 - 2014)
  • Tainan County, TW (2008 - 2020)
  • Tainan, TW (2012 - 2023)

Company Filing History:

goldMedal72 out of 7,285 
 
United Microelectronics Corp.
 patents

Years Active: 2004-2025

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Areas of Expertise:
Magnetic Memory Device
Strained Silicon Structure
CMOS Technology
Trench Fabrication
Dielectric Layer
Conductor Line Structure
Transistor Integration
Patterned Mask Layer
Dual Damascene Structure
Metal Gate
Semiconductor Process
Oxygen Treatment
72 patents (USPTO):Explore Patents
1. 12349367 - Semiconductor device and method for fabricating the same (2025-07-01),
2. 11785785 - Semiconductor device and method for fabricating the same (2023-10-10),
3. 11545522 - Semiconductor device and method for fabricating the same (2023-01-03),
4. 11283007 - Semiconductor device and method for fabricating the same (2022-03-22),
5. 11271154 - Magnetic tunnel junction (MTJ) device (2022-03-08),
6. 11121307 - Semiconductor device and method for fabricating the same (2021-09-14),
7. 11056536 - Semiconductor device and method for fabricating the same (2021-07-06),
8. 10903269 - Magnetic memory device and fabrication method thereof (2021-01-26),
9. 10847709 - Semiconductor device and method for fabricating the same (2020-11-24),
10. 10804138 - Method for fabricating a semiconductor device (2020-10-13),
11. 10699913 - Manufacturing method for trench (2020-06-30),
12. 10636744 - Memory device including alignment mark trench (2020-04-28),
13. 10199232 - Conductor line structure (2019-02-05),
14. 10109525 - Fabrication method and structure of semiconductor device with contact and plug (2018-10-23),
15. 9779942 - Method of forming patterned mask layer (2017-10-03),

Title: The Innovative Journey of Jiunn-Hsiung Liao

Introduction: Jiunn-Hsiung Liao, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Jiunn-Hsiung Liao's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Jiunn-Hsiung Liao has established himself as a pioneer in the renewable energy sector. His work has not only revolutionized the way we harness solar energy but has also paved the way for a more sustainable future.

Collaborations: Throughout his career, Jiunn-Hsiung Liao has collaborated with leading research institutions and universities to further his research and bring his innovative ideas to life. His partnerships have been instrumental in pushing the boundaries of renewable energy technology.

Conclusion: Jiunn-Hsiung Liao's passion for innovation and commitment to sustainability have solidified his position as a trailblazer in the field of renewable energy. His work continues to inspire future generations of inventors to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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