The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Oct. 07, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Wei Kuo, Tainan, TW;
Meng-Jun Wang, Taichung, TW;
Yi-Wei Tseng, New Taipei, TW;
Yu-Tsung Lai, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming an etch stop layer on the first IMD layer; forming a second IMD layer on the etch stop layer; forming a patterned hard mask on the second IMD layer; performing a first etching process to form a contact hole in the second IMD layer for exposing the etch stop layer; performing a second etching process to remove the patterned hard mask; performing a third etching process to remove the etch stop layer and the first IMD layer for exposing the MTJ; and forming a metal interconnection in the contact hole.