Yu-Tsung Lai

This inventor holds 45 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Magnetoresistive Memory. Top assignee: United Microelectronics Corp.. Active years: 2008-2026.

USPTO Granted Patents = 45 (Patent Applications = 13)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 64(Granted Patents)

Location History:

Fongyuan, TW (2012)
Tai-Chung Hsien, TW (2008 - 2013)
Taichung County, TW (2011 - 2013)
Taichung, TW (2014)
Tainan County, TW (2012 - 2020)
Tainan, TW (2014 - 2023)

Company Filing History:

45 out of 7,260

United Microelectronics Corp.

patents

Years Active: 2008-2026

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Areas of Expertise:

Magnetoresistive Random Access Memory

Semiconductor Fabrication

Magnetic Tunnel Junction

Dual Damascene Process

Memory Device

Trench Manufacturing

Patterning Method

Capacitor Fabrication

Interconnect Structure

Porous Low-K Layer

Post-Etch Residues

Alignment Mark Trench

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12557557 - Method for fabricating magnetoresistive random access memory (MRAM) device (2026-02-17),

2. 12527230 - Magnetoresistive random access memory device (2026-01-13),

3. 12471498 - Semiconductor device and method for fabricating the same (2025-11-11),

4. 12349367 - Semiconductor device and method for fabricating the same (2025-07-01),

5. 12133474 - Magnetoresistive random access memory and method of manufacturing the same (2024-10-29),

6. 11812669 - Magnetoresistive random access memory and method of manufacturing the same (2023-11-07),

7. 11785785 - Semiconductor device and method for fabricating the same (2023-10-10),

8. 11778922 - Semiconductor device and method for fabricating the same (2023-10-03),

9. 11737370 - Magnetoresistive random access memory (MRAM) device (2023-08-22),

10. 11706993 - Method of manufacturing magnetoresistive random access memory (MRAM) device (2023-07-18),

11. 11545522 - Semiconductor device and method for fabricating the same (2023-01-03),

12. 11387408 - Magnetoresistive random access memory and method of manufacturing the same (2022-07-12),

13. 11283007 - Semiconductor device and method for fabricating the same (2022-03-22),

14. 11271154 - Magnetic tunnel junction (MTJ) device (2022-03-08),

15. 11121307 - Semiconductor device and method for fabricating the same (2021-09-14),

Title: Yu-Tsung Lai: Pioneering Inventor from Tainan

Introduction: Yu-Tsung Lai is a distinguished inventor hailing from Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yu-Tsung Lai holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yu-Tsung Lai has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Throughout his career, Yu-Tsung Lai has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to remarkable advancements in technology.

Conclusion: Yu-Tsung Lai's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, cements his legacy as a visionary inventor shaping the world of tomorrow.