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For the Inventor, By the Inventor

Tainan, Taiwan

Yu-Tsung Lai

USPTO Granted Patents = 43 

 

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 57(Granted Patents)


Location History:

  • Fongyuan, TW (2012)
  • Tai-Chung Hsien, TW (2008 - 2013)
  • Taichung County, TW (2011 - 2013)
  • Taichung, TW (2014)
  • Tainan County, TW (2012 - 2020)
  • Tainan, TW (2014 - 2023)

Company Filing History:

goldMedal43 out of 7,085 
 
United Microelectronics Corp.
 patents

Years Active: 2008-2025

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Areas of Expertise:
Semiconductor Devices
Magnetoresistive Random Access Memory
Magnetic Tunnel Junction
Magnetic Memory Devices
Dual Damascene Process
Low-k Dielectrics
Interconnect Structures
Patterning Methods
Trench Fabrication
Self Aligned Contacts
Memory Device Manufacturing
Etching Techniques
43 patents (USPTO):Explore Patents
1. 12471498 - Semiconductor device and method for fabricating the same (2025-11-11),
2. 12349367 - Semiconductor device and method for fabricating the same (2025-07-01),
3. 12133474 - Magnetoresistive random access memory and method of manufacturing the same (2024-10-29),
4. 11812669 - Magnetoresistive random access memory and method of manufacturing the same (2023-11-07),
5. 11785785 - Semiconductor device and method for fabricating the same (2023-10-10),
6. 11778922 - Semiconductor device and method for fabricating the same (2023-10-03),
7. 11737370 - Magnetoresistive random access memory (MRAM) device (2023-08-22),
8. 11706993 - Method of manufacturing magnetoresistive random access memory (MRAM) device (2023-07-18),
9. 11545522 - Semiconductor device and method for fabricating the same (2023-01-03),
10. 11387408 - Magnetoresistive random access memory and method of manufacturing the same (2022-07-12),
11. 11283007 - Semiconductor device and method for fabricating the same (2022-03-22),
12. 11271154 - Magnetic tunnel junction (MTJ) device (2022-03-08),
13. 11121307 - Semiconductor device and method for fabricating the same (2021-09-14),
14. 11056536 - Semiconductor device and method for fabricating the same (2021-07-06),
15. 10916694 - Magnetoresistive random access memory (MRAM) device (2021-02-09),

Title: Yu-Tsung Lai: Pioneering Inventor from Tainan

Introduction: Yu-Tsung Lai is a distinguished inventor hailing from Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yu-Tsung Lai holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yu-Tsung Lai has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Throughout his career, Yu-Tsung Lai has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to remarkable advancements in technology.

Conclusion: Yu-Tsung Lai's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, cements his legacy as a visionary inventor shaping the world of tomorrow.

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