The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Dec. 23, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Chen-Yi Weng, New Taipei, TW;
Chin-Yang Hsieh, Tainan, TW;
Yi-Hui Lee, Taipei, TW;
Ying-Cheng Liu, Tainan, TW;
Yi-An Shih, Changhua County, TW;
Jing-Yin Jhang, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
Yu-Ping Wang, Hsinchu, TW;
Chien-Ting Lin, Tainan, TW;
Kun-Chen Ho, Tainan, TW;
Yi-Syun Chou, Taipei, TW;
Chang-Min Li, Yunlin County, TW;
Yi-Wei Tseng, New Taipei, TW;
Yu-Tsung Lai, Tainan, TW;
Jun Xie, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.