The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Jun. 01, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Wei Kuo, Tainan, TW;
Tai-Cheng Hou, Tainan, TW;
Yu-Tsung Lai, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first top electrode on the first MTJ and a second top electrode on the second MTJ, a passivation layer between the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on and directly contacting the passivation layer and around the first MTJ and the second MTJ. Preferably, a top surface of the passivation layer includes a V-shape and a valley point of the V-shape is higher than a bottom surface of the first top electrode.