The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Nov. 22, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Tai-Cheng Hou, Tainan, TW;
Wei-Xin Gao, Tainan, TW;
Fu-Yu Tsai, Tainan, TW;
Chin-Yang Hsieh, Tainan, TW;
Chen-Yi Weng, New Taipei, TW;
Jing-Yin Jhang, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Kun-Ju Li, Tainan, TW;
Chih-Yueh Li, Taipei, TW;
Chia-Lin Lu, Taoyuan, TW;
Chun-Lung Chen, Tainan, TW;
Kun-Yuan Liao, Hsinchu, TW;
Yu-Tsung Lai, Tainan, TW;
Wei-Hao Huang, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.