The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Sep. 27, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Chen-Yi Weng, New Taipei, TW;
Chin-Yang Hsieh, Tainan, TW;
Yi-Hui Lee, Taipei, TW;
Ying-Cheng Liu, Tainan, TW;
Yi-An Shih, Changhua County, TW;
Jing-Yin Jhang, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
Yu-Ping Wang, Hsinchu, TW;
Chien-Ting Lin, Tainan, TW;
Kun-Chen Ho, Tainan, TW;
Yi-Syun Chou, Taipei, TW;
Chang-Min Li, Yunlin County, TW;
Yi-Wei Tseng, New Taipei, TW;
Yu-Tsung Lai, Tainan, TW;
Jun Xie, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.