The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Jul. 08, 2019
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chih-Wei Kuo, Tainan, TW;

Yu-Tsung Lai, Tainan, TW;

Jiunn-Hsiung Liao, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 21/768 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory device includes a first dielectric layer on a substrate, first and second via plugs in the first dielectric layer, first and second cylindrical memory stacks on the first and second via plugs, respectively, and an insulating cap layer conformally disposed on the first dielectric layer and on sidewalls of the first and second cylindrical memory stacks. The insulating cap layer is not disposed in a logic area and a via forming region between the first and second cylindrical memory stacks.


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