The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Mar. 14, 2012
Hsin-ming Hou, Tainan, TW;
Yu-cheng Tung, Kaohsiung, TW;
Ji-fu Kung, Taichung, TW;
Wai-yi Lien, Hsinchu, TW;
Ming-tsung Chen, Tainan, TW;
Hsin-Ming Hou, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Ji-Fu Kung, Taichung, TW;
Wai-Yi Lien, Hsinchu, TW;
Ming-Tsung Chen, Tainan, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.