The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Feb. 23, 2009
Applicants:

I-chang Wang, Tainan, TW;

Ming-tsung Chen, Hsin-Chu Hsien, TW;

Ling-chun Chou, Yunlin County, TW;

Po-chao Tsao, Taipei Hsien, TW;

Tsung-hung Chang, Yunlin County, TW;

Hui-ling Chen, Kao-Hsiung Hsien, TW;

Cheng-yen Wu, Kaohsiung, TW;

Chieh-te Chen, Kaohsiung, TW;

Shin-chi Chen, Tainan County, TW;

Inventors:

I-Chang Wang, Tainan, TW;

Ming-Tsung Chen, Hsin-Chu Hsien, TW;

Ling-Chun Chou, Yunlin County, TW;

Po-Chao Tsao, Taipei Hsien, TW;

Tsung-Hung Chang, Yunlin County, TW;

Hui-Ling Chen, Kao-Hsiung Hsien, TW;

Cheng-Yen Wu, Kaohsiung, TW;

Chieh-Te Chen, Kaohsiung, TW;

Shin-Chi Chen, Tainan County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/64 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01);
Abstract

A gate structure includes a gate disposed on a substrate, a first spacer disposed on the substrate and surrounding the gate and a second spacer disposed on the first spacer and surrounding the gate, the second spacer is lower than the first spacer.


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