Tsung-Hung Chang

Title: The Innovative Contributions of Tsung-Hung Chang

Introduction

Tsung-Hung Chang is a prominent inventor based in Yunlin County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing the fabrication processes of semiconductor devices.

Latest Patents

One of Tsung-Hung Chang's latest patents is a method for fabricating a semiconductor device that features a patterned metal layer embedded in an interlayer dielectric layer. This innovative method begins with providing a substrate that includes a first metal gate and a second metal gate. A first hard mask is placed on the first metal gate, while a second hard mask is positioned on the second metal gate. The process involves utilizing these hard masks to remove part of the first interlayer dielectric (ILD) layer, creating a recess where a patterned metal layer is formed. This patterned metal layer is strategically placed in the recess and on the shallow trench isolation (STI), ensuring that its top surface is lower than the top surfaces of the hard masks.

Career Highlights

Tsung-Hung Chang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His expertise and innovative approaches have contributed to the company's reputation for excellence in semiconductor fabrication.

Collaborations

Throughout his career, Tsung-Hung Chang has collaborated with notable colleagues, including Yi-Wei Chen and Ching-Ling Lin. These collaborations have further enhanced the quality and impact of his work in the semiconductor field.

Conclusion

Tsung-Hung Chang's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the industry. His work continues to influence the development of advanced semiconductor devices, showcasing the vital role of inventors in technological progress.