The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Sep. 24, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Ching-Ling Lin, Kaohsiung, TW;
Chih-Sen Huang, Tainan, TW;
Ching-Wen Hung, Tainan, TW;
Jia-Rong Wu, Kaohsiung, TW;
Tsung-Hung Chang, Yunlin County, TW;
Yi-Hui Lee, Taipei, TW;
Yi-Wei Chen, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/76897 (2013.01); H01L 21/76829 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first metal gate on the substrate; a first hard mask on the first metal gate; an interlayer dielectric (ILD) layer on top of and around the first metal gate; and a patterned metal layer embedded in the ILD layer, in which the top surface of the patterned metal layer is lower than the top surface of the first hard mask.