The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Sep. 16, 2011
Po-chao Tsao, New Taipei, TW;
Chang-chi Huang, Miao-Li Hsien, TW;
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Feng-yi Chang, Chiayi County, TW;
Pei-yu Chou, Tainan, TW;
Jiunn-hsiung Liao, Tainan, TW;
Chih-wen Feng, Tainan, TW;
Ying-chih Lin, Tainan, TW;
Po-Chao Tsao, New Taipei, TW;
Chang-Chi Huang, Miao-Li Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
Feng-Yi Chang, Chiayi County, TW;
Pei-Yu Chou, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Chih-Wen Feng, Tainan, TW;
Ying-Chih Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An opening structure is disclosed. The opening structure includes: a semiconductor substrate; at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall; a dielectric thin film covering at least a portion of the sidewall of each of the openings; an etch stop layer disposed between the semiconductor substrate and the dielectric layer and extending partially into the openings to isolate the dielectric thin film from the semiconductor substrate; and a metal layer filled in the openings.