The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Mar. 26, 2007
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Chang-chi Huang, Miao-Li Hsien, TW;
Po-chao Tsao, Taipei Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
Chang-Chi Huang, Miao-Li Hsien, TW;
Po-Chao Tsao, Taipei Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A metal oxide semiconductor (MOS) transistor is disclosed. The MOS transistor includes: a semiconductor substrate; a gate disposed on the semiconductor substrate, wherein the gate comprises two sidewalls; a spacer formed on the sidewalls of the gate; a source/drain region disposed in the semiconductor substrate; a silicide layer disposed on top of the gate and the surface of the source/drain region; and a retarded interface layer disposed in the junction between the silicide layer and the gate and source/drain region.