The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Mar. 15, 2007
Ling-chun Chou, Yunlin County, TW;
Ming-tsung Chen, Hsinchu County, TW;
Po-chao Tsao, Taipei County, TW;
Ling-Chun Chou, Yunlin County, TW;
Ming-Tsung Chen, Hsinchu County, TW;
Po-Chao Tsao, Taipei County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a self-aligned contact is provided. A first dielectric layer is formed on a substrate having a contact region therein. Next, a lower hole corresponding to the contact region is formed in the first dielectric layer. Thereafter, a second dielectric layer is formed on the first dielectric layer, and then an upper hole self-aligned to and communicated with the lower hole is formed in the second dielectric layer, wherein the upper hole and the lower hole constitute a self-aligned contact hole. Afterwards, the self-aligned contact hole is filled with a conductive layer.