The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Nov. 07, 2007
Alex Liu, Taipei City, TW;
Cheng-tung Huang, Kaohsiung, TW;
Wei-tsun Shiau, Kaohsiung County, TW;
Kuan-yang Liao, Hsinchu, TW;
Alex Liu, Taipei City, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Wei-Tsun Shiau, Kaohsiung County, TW;
Kuan-Yang Liao, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating semiconductor devices is provided. A plurality of gate structures is formed over a substrate. A source region and a drain region are formed in the substrate and adjacent to sidewalls of each gate structure. A self-aligned salicide block (SAB) layer is formed over the substrate to cover the gate structures and the exposed surface of the substrate. An anneal process is performed. The SAB layer creates a tension stress during the anneal process so that the substrate under the gate structures is subjected to the tension stress. A portion of the SAB layer is removed to expose a portion of the gate structures and a portion of the surface of the substrate. A salicide process is performed.