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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsien-Liang Meng

This inventor holds 16 USPTO granted patents and 1 published patent application. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., United Silicon Incorporated. Active years: 2000-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsien-Liang Meng. Retrieved from https://idiyas.com/inventor/hsien-liang-meng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 75.0

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Tainan, TW (2015)
  • Hsinchu, TW (2000 - 2021)

Company Filing History:

goldMedal10 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 7,278 
 
United Microelectronics Corp.
 patents
bronzeMedal3 out of 54 
 
United Silicon Incorporated
 patents

Years Active: 2000-2021

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16 patents (USPTO):Explore Patents
1. 11211261 - Package structures and methods for forming the same (2021-12-28),
2. 11088109 - Packages with multi-thermal interface materials and methods of fabricating the same (2021-08-10),
3. 10872831 - Method of forming a semiconductor package (2020-12-22),
4. 10269669 - Semiconductor package and method of forming the same (2019-04-23),
5. 10049894 - Package structures and methods for forming the same (2018-08-14),
6. 9418956 - Zero stand-off bonding system and method (2016-08-16),
7. 9362236 - Package structures and methods for forming the same (2016-06-07),
8. 9129878 - Mechanisms for forming backside illuminated image sensor device structure (2015-09-08),
9. 9127356 - Sputtering target with reverse erosion profile surface and sputtering system and method using the same (2015-09-08),
10. 9064880 - Zero stand-off bonding system and method (2015-06-23),
11. 7402496 - Complementary metal-oxide-semiconductor device and fabricating method thereof (2008-07-22),
12. 7288828 - Metal oxide semiconductor transistor device (2007-10-30),
13. 6225189 - Method of fabricating shallow trench isolation structure (2001-05-01),
14. 6204147 - Method of manufacturing shallow trench isolation (2001-03-20),
15. 6187692 - Method for forming an insulating film (2001-02-13),

Title: Hsien-Liang Meng: Innovator from Hsinchu

Introduction: Hsien-Liang Meng is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hsien-Liang Meng holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Meng has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Hsien-Liang Meng has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge exchange that has led to numerous breakthroughs.

Conclusion: Hsien-Liang Meng's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a visionary inventor and a driving force behind the advancement of technology on a global scale.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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